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BU406TU

Manufacturer:

On Semiconductor

Mfr.Part #:

BU406TU

Datasheet:
Description:

BJTs TO-220-3 Through Hole NPN 60 W Collector Base Voltage (VCBO):400 V Collector Emitter Voltage (VCEO):200 V Emitter Base Voltage (VEBO):6 V

ParameterValue
Voltage Rating (DC)150 V
Length9.9 mm
Width4.5 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height9.2 mm
PackagingTube
Radiation HardeningNo
RoHSCompliant
PolarityNPN
REACH SVHCNo SVHC
Contact PlatingTin
Frequency10 MHz
Number of Elements1
Current Rating7 A
Lifecycle StatusEOL (Last Updated: 2 months ago)
Max Power Dissipation60 W
Power Dissipation60 W
Max Collector Current7 A
Collector Emitter Breakdown Voltage200 V
Transition Frequency10 MHz
Element ConfigurationSingle
Collector Emitter Voltage (VCEO)200 V
Gain Bandwidth Product10 MHz
Collector Base Voltage (VCBO)400 V
Collector Emitter Saturation Voltage1 V
Emitter Base Voltage (VEBO)6 V
Schedule B8541290080
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 months ago)
Max Cutoff Collector Current5 mA
Transistor TypeNPN

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